Substrate processing system

ABSTRACT

There is provided a substrate processing system, including: a plurality of substrate processing apparatuses; a first control part installed in each of the plurality of substrate processing apparatuses and configured to transmit a first apparatus data from each of the plurality of substrate processing apparatuses; a second control part configured to receive the first apparatus data from each of the plurality of substrate processing apparatuses, generate a priority data of each of the plurality of substrate processing apparatuses based on the first apparatus data, and transmit the priority data to the first control part; and a display part configured to display the priority data thereon.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2017-140865, filed on Jul. 20, 2017, theentire contents of which are incorporated herein by reference.

TECHNICAL FIELD

The present disclosure relates to a substrate processing system.

BACKGROUND

Along with the high integration of semiconductor devices represented bya large scale integrated circuit (LSI), a dynamic random access memory(DRAM), a flash memory and the like, circuit patterns or structuresformed during the manufacturing process have been miniaturized. Asubstrate processing apparatus that performs one of various processesfor manufacturing a semiconductor device performs fault detection &classification (FDC) with accumulated monitoring data to check theintegrity of the apparatus and notifies of an abnormality by an alarm,thus preventing a defective product from being produced.

Due to individual variations in each apparatus, there is a problem thatthe process result for each substrate does not become uniform.

SUMMARY

Some embodiments of the present disclosure provide a technique capableof improving a process uniformity for each substrate.

According to one embodiment of the present disclosure, there is provideda substrate processing system, including: a plurality of substrateprocessing apparatuses; a first control part installed in each of theplurality of substrate processing apparatuses and configured to transmita first apparatus data from each of the plurality of substrateprocessing apparatuses; a second control part configured to receive thefirst apparatus data from each of the plurality of substrate processingapparatuses, generate a priority data of each of the plurality ofsubstrate processing apparatuses based on the first apparatus data, andtransmit the priority data to the first control part; and a display partconfigured to display the priority data thereon.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration diagram of a substrate processingsystem according to one embodiment of the present disclosure.

FIG. 2 is a schematic configuration diagram of a substrate processingapparatus according to one embodiment of the present disclosure.

FIG. 3 is a diagram illustrating a gas supply part according to oneembodiment of the present disclosure.

FIG. 4 is a schematic configuration diagram of a controller according toone embodiment of the present disclosure.

FIG. 5 is a flowchart of a substrate process according to one embodimentof the present disclosure.

FIG. 6 is an example of an apparatus data of a substrate processingapparatus according to one embodiment of the present disclosure.

FIG. 7 is an example of a data comparison table of a substrateprocessing system according to one embodiment of the present disclosure.

FIG. 8 is an example of a parameter change necessity determination tableaccording to one embodiment of the present disclosure.

FIG. 9 is an example of a parameter change message according to oneembodiment of the present disclosure.

FIG. 10 is an example of a parameter change display according to oneembodiment of the present disclosure.

FIG. 11 is an example of a parameter changeable range according to anaccount level according to one embodiment of the present disclosure.

FIG. 12 is an example of setting a transfer order based on a prioritydata according to one embodiment of the present disclosure.

FIG. 13 is a schematic configuration diagram of a substrate processingsystem according to another embodiment of the present disclosure.

FIG. 14 is a schematic configuration diagram of a cluster type substrateprocessing apparatus according to another embodiment of the presentdisclosure.

DETAILED DESCRIPTION

Embodiments of the present disclosure will now be described.

One Embodiment

One embodiment of the present disclosure will be described as below withreference to the drawings.

Hereinafter, a substrate processing system according to the presentembodiment will be described.

(1) Configuration of Substrate Processing System

A schematic configuration of a substrate processing system according toone embodiment of the present disclosure will be described withreference to FIGS. 1 to 4. FIG. 1 is a diagram illustrating aconfiguration example of the substrate processing system according tothe present embodiment. FIG. 2 is a transversal cross sectional viewillustrating a schematic configuration of a substrate processingapparatus according to the present embodiment. FIG. 3 is a schematicconfiguration diagram of a gas supply system of the substrate processingapparatus according to the present embodiment. FIG. 4 is a schematicconfiguration diagram illustrating a connection relationship between acontroller 260 installed in the substrate process apparatus and thesubstrate processing system.

In FIG. 1, a substrate processing system 1000 includes a plurality ofsubstrate processing apparatuses 100 (100 a, 100 b, 100 c, and 100 d), asecond control part 274, and a network 268 that connects them. Ahigher-level device 500 may be configured as being included in thesubstrate processing system 1000. The substrate processing apparatus 100is an apparatus that processes a substrate 200 as one of variousprocesses for manufacturing a semiconductor device. Here, the secondcontrol part 274 is, for example, a group management controller.Furthermore, the higher-level device 500 is, for example, a hostcomputer.

When a plurality of substrates 200 are processed using the plurality ofsubstrate processing apparatuses 100 configured as above, the followingproblems may occur.

(a) The process quality of each substrate may be varied due to adifference in performance (an individual variation) of each substrateprocessing apparatus.

(b) Since there is no index for correcting such an individual variation,it may take a certain amount of time to adjust the substrate processingapparatus, decreasing the throughput.

(c) A substrate processing apparatus with poor performance may begenerated, thus causing a decrease in yield.

(d) In a factory for manufacturing a vast semiconductor device, it maytake some time to identify a substrate processing apparatus with poorperformance, thus causing a decrease in manufacturing throughput of asemiconductor device.

In order to address these problems, the substrate processing apparatuses100 of the present disclosure includes a controller 260 (260 a, 260 b,260 c, and 260 d) that acquires various data, display parts 270 (270 a,270 b, 270 c, and 270 d) that display various data, and datatransceiving parts 285 (285 a, 285 b, 285 c, and 285 d) that transmitand receive various data to and from the second control part 274. Thesecond control part 274 has a first calculation part 275, a first memorypart 276, and a first transceiving part 277. The first transceiving part277 transmits and receives data between the substrate processingapparatuses 100 and the second control part 274. The first memory part276 records data, data calculated by the first calculation part 275,data transmitted from the higher-level device 500, an arbitrary datainputted by the user, a database of these data, and the like. The firstcalculation part 275 is configured to perform a calculation processbased on at least one of the aforementioned data. The substrateprocessing system may also be configured as a system 3000 including aplurality of substrate processing systems 2000 (2000 a, 2000 b, 2000 c,and 2000 d), which will be described later.

Next, a schematic configuration of the substrate processing apparatus100 will be described with reference to FIG. 2.

(2) Configuration of Substrate Processing Apparatus

The substrate processing apparatus 100 is, for example, a unit forforming an insulating film on the substrate 200, and is configured as asingle-wafer-type substrate processing apparatus as illustrated in FIG.2. Here, the substrate processing apparatus 100 a (100) will bedescribed. The other substrate processing apparatuses 100 b, 100 c, and100 d have the same configuration, and therefore, descriptions thereofwill be omitted.

As illustrated in FIG. 2, the substrate processing apparatus 100includes a process vessel 202. The process vessel 202 is configured as,for example, a flat airtight vessel having a circular cross section. Theprocess vessel 202 is made of, e.g., a metal material such as aluminum(Al) or stainless steel (SUS), or quartz. A process chamber 201 in whichthe substrate 200 such as a silicon wafer as a substrate is processed,and a transfer chamber 203 are formed inside the process vessel 202. Theprocess vessel 202 includes an upper vessel 202 a and a lower vessel 202b. A partition part 204 is installed between the upper vessel 202 a andthe lower vessel 202 b. A space which is surrounded by the upper vessel202 a and is defined above the partition part 204 will be referred to asthe process chamber 201. Furthermore, a space which is surrounded by thelower vessel 202 b and is defined near a gate valve 1490 will bereferred to as the transfer chamber 203.

A substrate loading/unloading port 1480 adjacent to the gate valve 1490is formed in a side surface of the lower vessel 202 b. The substrate 200moves between a transfer chamber (not shown) and the transfer chamber203 via the substrate loading/unloading port 1480. A plurality of liftpins 207 are installed in a lower portion of the lower vessel 202 b. Thelower vessel 202 b is also grounded.

A substrate supporting part 210 that supports the substrate 200 isinstalled inside the process chamber 201. The substrate supporting part210 mainly includes a substrate mounting table 212 having a mountingsurface 211 on which the substrate 200 is mounted, and a heater 213 as aheating part. Through holes 214 through which the lift pins 207penetrate are formed in the substrate mounting table 212 at positionscorresponding to the lift pins 207, respectively. In addition, a biaselectrode 256 for applying a bias to the substrate 200 or the processchamber 201 may be installed in the substrate mounting table 212. Here,a temperature control part 400 is connected to the heater 213. Atemperature of the heater 213 is controlled by the temperature controlpart 400. The temperature information of the heater 213 can betransmitted from the temperature control part 400 to the controller 260.The bias electrode 256 is connected to a bias adjusting part 257 suchthat the bias can be controlled by the bias adjusting part 257. The biasadjusting part 257 is also configured to transmit and receive the biasdata to and from the controller 260.

The substrate mounting table 212 is supported by a shaft 217. The shaft217 penetrates a lower portion of the process vessel 202, and isconnected to an elevating part 218 installed outside the process vessel202. The substrate 200 mounted on the substrate mounting surface 211 canbe elevated and lowered by elevating and lowering the shaft 217 and asubstrate mounting table 212 with the operation of the elevating part218. In addition, the periphery of a lower end portion of the shaft 217is covered with a bellows 219, so that the interior of the processchamber 201 is hermetically kept. Furthermore, the elevating part 218may be configured to transmit and receive a height data (position data)of the substrate mounting table 212 to and from the controller 260. Atleast two positions of the substrate mounting table 212 may be set. Forexample, the positions include a first process position and a secondprocess position. The first process position and the second processposition may be adjusted, respectively.

The substrate mounting table 212 is moved to a wafer transfer positionduring the transfer of the substrate 200 and is moved to the firstprocess position (a wafer process position) indicated by the solid linein FIG. 2 during a first process of the substrate 200. During a secondprocess, the substrate mounting table 212 is moved to the second processposition indicated by the broken line in FIG. 2. The wafer transferposition is a position at which the tips of the lift pins 207 protrudefrom the upper surface of the substrate mounting surface 211.

Specifically, when the substrate mounting table 212 is lowered to thewafer transfer position, the tips of the lift pins 207 protrude from theupper surface of the substrate mounting surface 211, so that the liftpins 207 support the substrate 200 from below. Furthermore, when thesubstrate mounting table 212 is elevated up to the wafer processposition, the lift pins 207 are moved downward from the upper surface ofthe substrate mounting surface 211, so that the substrate mountingsurface 211 supports the substrate 200 from below. In addition, sincethe lift pins 207 are in direct contact with the substrate 200, it isdesirable to form the lift pins 207 with, for example, a material suchas quartz or alumina.

(Exhaust System)

A first exhaust port 221 as a first exhaust part configured to exhaustan internal atmosphere of the process chamber 201 therethrough is formedin a side surface of the process chamber 201 (the upper vessel 202 a).An exhaust pipe 224 a is connected to the first exhaust port 221. Apressure regulator 227 such as an auto pressure controller (APC) thatcontrols the interior of the process chamber 201 to reach apredetermined pressure, and a vacuum pump 223 are sequentially installedin series in the exhaust pipe 224 a. A first exhaust system (exhaustline) is mainly configured by the first exhaust port 221, the exhaustpipe 224 a, and the pressure regulator 227. The vacuum pump 223 may alsobe included in the first exhaust system. In addition, a second exhaustport 1481 through which an internal atmosphere of the transfer chamber203 is exhausted is formed in the side surface of the transfer chamber203. An exhaust pipe 1482 is also installed in the second exhaust port1481. A pressure regulator 228 is installed in the exhaust pipe 1482 sothat the interior of the transfer chamber 203 can be adjusted to have apredetermined pressure. Furthermore, the internal atmosphere of theprocess chamber 201 may be exhausted through the transfer chamber 203.The pressure regulator 227 is also configured to transmit and receive apressure data and a valve opening degree data to and from the controller260. In addition, the vacuum pump 223 is configured to transmit anON/OFF data of the pump, a load data or the like to the controller 260.

(Gas Introduction Hole)

A lid 231 is installed in an upper surface (ceiling wall) of a showerhead 234 installed at the upper portion of the process chamber 201. Agas introduction hole 241 through which various kinds of gases aresupplied into the process chamber 201 is formed in the lid 231. Theconfiguration of each gas supply unit connected to the gas introductionhole 241 as a gas supply part will be described hereinbelow.

(Gas Dispersion Unit)

The shower head 234 as a gas dispersion unit includes a buffer chamber232 and a dispersion plate 244 a. In addition, the dispersion plate 244a may be configured as a first electrode 244 b serving as a firstactivation part. A plurality of holes 234 a for dispersing and supplyinga gas to the substrate 200 therethrough is formed in the dispersionplate 244 a. The shower head 234 is installed between the gasintroduction hole 241 and the process chamber 201. The gas introducedfrom the gas introduction hole 241 is supplied to the buffer chamber 232(also referred to as a dispersion part) of the shower head 234, andsubsequently, is supplied to the process chamber 201 through the holes234 a.

Furthermore, in the case where the dispersion plate 244 a is configuredas the first electrode 244 b, the first electrode 244 b is made of aconductive metal, and is configured as a portion of the activation part(excitation part) for exciting the gas within the process chamber 201.An electromagnetic wave (high-frequency power or microwave) may besupplied to the first electrode 244 b. In the case where the lid 231 isformed of a conductive member, an insulating block 233 is installedbetween the lid 231 and the first electrode 244 b, thereby insulatingthe lid 231 from the first electrode 244 b.

(Activation Part (Plasma Generation Part))

A configuration in which the first electrode 244 b as the activationpart is installed will be described. A matcher 251 and a high-frequencypower source 252 are connected to the first electrode 244 b as theactivation part so that an electromagnetic wave (a high-frequency poweror microwaves) is supplied to the first electrode 244 b. Therefore, thegas supplied into the process chamber 201 can be activated. In addition,the first electrode 244 b is configured to generate acapacitively-coupled plasma. Specifically, the first electrode 244 b isformed in a conductive plate shape and is supported by the upper vessel202 a. The activation part is configured by at least the first electrode244 b, the matcher 251, and the high-frequency power source 252. Inaddition, an impedance meter 254 may be installed between the firstelectrode 244 b and the high-frequency power source 252. By installingthe impedance meter 254, the matcher 251 and the high-frequency powersource 252 can be feedback-controlled based on the measured impedance.Furthermore, the high-frequency power source 252 is configured totransmit and receive a power data to and from the controller 260. Thematcher 251 is configured to transmit and receive a matching data(traveling wave data or reflective wave data) to and from the controller260. The impedance meter 254 is configured to transmit and receive animpedance data to and from the controller 260.

(Supply System)

A common gas supply pipe 242 is connected to the gas introduction hole241. The interior of the common gas supply pipe 242 has a communicationstructure. The gas supplied from the common gas supply pipe 242 issupplied into the shower head 234 through the gas introduction hole 241.

A gas supply part illustrated in FIG. 3 is connected to the common gassupply pipe 242. A first gas supply pipe 113 a, a second gas supply pipe123 a, and a third gas supply pipe 133 a are connected to the gas supplypart.

A first element-containing gas (first process gas) is mainly suppliedfrom a first gas supply part including the first gas supply pipe 113 a.A second element-containing gas (second process gas) is mainly suppliedfrom a second gas supply part including the second gas supply pipe 123a. A third element-containing gas is mainly supplied from a third gassupply part including the third gas supply pipe 133 a.

(First Gas Supply Part)

A first gas supply source 113, a mass flow controller (MFC) 115 as aflow rate controller (flow rate control part), and a valve 116 as anopening/closing valve are installed in the first gas supply pipe 113 asequentially from the corresponding upstream side.

The first element-containing gas is supplied from the first gas supplypipe 113 a to the shower head 234 via the MFC 115, the valve 116, andthe common gas supply pipe 242.

The first element-containing gas is one of the process gases. The firstelement-containing gas is a gas containing silicon (Si), for example, agas such as a hexachlorodisilane (Si₂Cl₆, abbreviation: HCDS) gas or thelike.

The first gas supply part is mainly configured by the first gas supplypipe 113 a, the MFC 115, and the valve 116.

In addition, one or both of the first gas supply source 113 and a remoteplasma unit (RPU) 180 a for activating a first gas may be regarded asbeing included in the first gas supply part.

(Second Gas Supply Part)

A second gas supply source 123, an MFC 125, and a valve 126 areinstalled in the second gas supply pipe 123 a sequentially from thecorresponding upstream side.

The second element-containing gas is supplied from the second gas supplypipe 123 a into the shower head 234 via the MFC 125, the valve 126, andthe common gas supply pipe 242.

The second element-containing gas is one of the process gases. Thesecond element-containing gas is a gas containing nitrogen (N), forexample, a gas such as an ammonia (NH₃) gas, a nitrogen (N₂) gas or thelike.

The second gas supply part is mainly configured by the second gas supplypipe 123 a, the MFC 125, and the valve 126.

In addition, one or both of the second gas supply source 123 and aremote plasma unit (RPU) 180 b for activating the first gas may beregarded as being included in the second gas supply part.

(Third Gas Supply Part)

A third gas supply source 133, an MFC 135, and a valve 136 are installedin the third gas supply pipe 133 a sequentially from the correspondingupstream side.

An inert gas is supplied from the third gas supply pipe 133 a to theshower head 234 via the MFC 135, the valve 136, and the common gassupply pipe 242.

The inert gas is a gas that has difficulty reacting with the first gas.The inert gas is, for example, a gas such as a nitrogen (N₂) gas, anargon (Ar) gas, or a helium (He) gas.

The third gas supply part is mainly configured by the third gas supplypipe 133 a, the MFC 135, and the valve 136.

Here, the MFC, the valve, (a vaporizer), and (the RPU) constituting eachof the first gas supply part, the second gas supply part, and the thirdgas supply part are configured to transmit and receive, to and from thecontroller 260, the following data: the flow rate data for the MFC, theopening degree data for the valve, (the vaporization amount data for thevaporizer), and (the power data for the RPU).

(Control Part)

As illustrated in FIGS. 1 to 3, the substrate processing apparatus 100includes the controller 260 that controls the operations of therespective parts of the substrate processing apparatus 100.

A schematic configuration diagram of the controller 260, and aconnection configuration diagram of the second control part 274, thenetwork 268, the higher-level device 500, and the like are illustratedin FIG. 4. The controller 260, which is a control part, may beconfigured as a computer including a central processing unit (CPU) 261,a random access memory (RAM) 262, a memory device 263, and an I/O port264. The RAM 262, the memory device 263, and the I/O port 264 areconfigured to exchange data with the CPU 261 via an internal bus 265. Aninput/output device 269 configured as, for example, a touch panel or thelike, an external memory device 267, a transceiving part 285, and thelike are connected to the controller 260. The input/output device 269may also be configured to include a display screen 270 as a notificationpart (display part) that notifies the state of the substrate processingapparatus 100 and data received from the second control part 274.

The memory device 263 is configured by, for example, a flash memory, ahard disk drive (HDD), or the like. A control program for controllingoperations of the substrate processing apparatus, a process recipe forspecifying sequences and conditions of a substrate process (to bedescribed later), a calculation data or process data generated in thecourse of setting the process recipe used to process the substrate 200,or the like is readably stored in the memory device 263. The processrecipe functions as a program for causing the controller 260 to executeeach sequence in the substrate processing step (to be described later)to obtain a predetermined result. Hereinafter, the process recipe andthe control program will be generally and simply referred to as a“program”. When the term “program” is used herein, it may indicate acase of including only the process recipe, a case of including only thecontrol program, or a case of including both the process recipe and thecontrol program. The RAM 262 is configured as a memory area (work area)in which a program read by the CPU 261 or data such as the calculationdata or the process data is temporarily stored.

The I/O port 264 is connected to the respective components of thesubstrate processing apparatus 100 such as the gate valve 1490, theelevating part 218, the temperature control part 400, the pressureregulators 227 and 228, the vacuum pump 223, the matcher 251, thehigh-frequency power source 252, the MFCs 115, 125, and 135, the valves116, 126, and 136, the bias adjusting part 257, and the like. The I/Oport 264 may also be connected to the impedance meter 254, the RPU 180,a vacuum transfer robot 2700, an atmospheric transfer robot 2220, andthe like. Furthermore, the expression “connection” used in the presentdisclosure may mean that the respective parts are connected to eachother by a physical cable, and also mean that signals (electronic data)of the respective parts can be transmitted and received directly orindirectly.

The CPU 261 as a calculation part is configured to read the controlprogram from the memory device 263 and execute the same. The CPU 261also reads the process recipe from the memory device 263 according to anoperation command inputted from the input/output device 269.Furthermore, the CPU 261 is configured to calculate a calculation databy comparing and calculating the set value inputted from thetransceiving part 285 and the process recipe or the control data storedin the memory device 263. Further, the CPU 261 is configured to executethe process of determining a corresponding process data (process recipe)from the calculation data. In addition, the CPU 261 is configured tocontrol, according to the contents of the process recipe thus read, theopening/closing operation of the gate valve 1490, the elevating andlowering operation by the elevating part 218, the operation of supplyingelectric power to the temperature control part 400, the temperatureadjusting operation of the substrate mounting table 212 by thetemperature control part 400, the pressure adjusting operation by thepressure regulators 227 and 228, the ON/OFF control operation of thevacuum pump 223, the gas flow rate control operation by the MFCs 115,125 and 135, the gas activating operation of the RPUs 180 a and 180 b,the ON/OFF control operation of gas by the valves 116, 126, 136, thepower matching operation by the matcher 251, the power control operationof the high-frequency power source 252, the adjustment operation of thebias adjusting part 257, the matching operation of the matcher 251 basedon the measurement data measured by the impedance meter 254, the powercontrol operation of the high-frequency power source 252, and the like.The control of the respective parts is performed by transmitting andreceiving control information according to the contents of the processrecipe through the use of the transceiving part of the CPU 261.

The controller 260 is not limited to a case where it is configured as adedicated computer, but may be configured as a general purpose computer.For example, the controller 260 according to the present embodiment maybe configured by installing, on the general purpose computer, theaforementioned program (data) stored in the external memory device 267(for example, a magnetic tape, a magnetic disk such as a flexible diskor a hard disk, an optical disc such as a CD or a DVD, a magneto-opticaldisc such as an MO, or a semiconductor memory such as a USB memory or amemory card). Furthermore, means for supplying the program to thecomputer is not limited to a case of supplying the program via theexternal memory device 267. For example, the program (data) may besupplied to the computer using a communication means such as thetransceiving part 285 or the network 268 (Internet or a dedicated line),instead of using the external memory device 267. In addition, the memorydevice 263 or the external memory device 267 is configured as anon-transitory computer-readable recording medium. Hereinafter, thememory device 263 and the external memory device 267 will be generallyand simply referred to as a “recording medium.” When the term “recordingmedium” is used herein, it may indicate a case of including only thememory device 263, a case of including only the external memory device267, or a case of including both the memory device 263 and the externalmemory device 267.

(2) Substrate Processing Step

A process example of forming an insulating film on a substrate andupdating the setting of each substrate processing apparatus using theresult of film formation, which is one of various processes formanufacturing a semiconductor device, and an example of the process flowof the aforementioned substrate processing system 1000 and a table ofeach data will be described below with reference to FIGS. 5 to 8. Forexample, a silicon nitride (SiN) film as a nitride film is formed as theinsulating film. The manufacturing process is performed by the substrateprocessing system 1000 and the substrate processing apparatus 100described above. In the following descriptions, the operations of therespective parts are controlled by the controller 260.

Hereinafter, a substrate processing step will be described.

(Apparatus Setting Step S300)

When a substrate is processed, first, a process recipe to be performedin each substrate processing apparatus 100 is set in the controller 260.For example, the data recorded in the memory device 263 is read in theRAM 262 and a set value is set in each part via the I/O port 264.Furthermore, the setting of the process recipe may be performed bytransmitting the process recipe from the second control part 274 or thehigher-level device 500 connected via the network 268. After theoperation of each part is set, a manufacturing step S301 is performed.

(Manufacturing Step S301)

At the manufacturing step S301, a first gas is supplied to the processchamber 201 by controlling the first gas supply part and the processchamber 201 is exhausted by controlling the exhaust system to processthe substrate 200, according to the process recipe. In some embodiments,the second gas supply part may be controlled to supply a second gas intothe process space so that the second gas exists in the process spacetogether with the first gas and a CVD process is performed.Alternatively, a cyclic process may be performed by alternatelysupplying the first gas and the second gas. In addition, in the case ofprocessing the second gas under a plasma state, plasma may be generatedinside the process chamber 201 by supplying a high-frequency power tothe first electrode 244 b. A method of activating the second gas usingthe RPU 180 b may also be used.

As the cyclic process, which is a specific example of a film processingmethod, the following method may be considered. For example, adichlorosilane (SiH₂Cl₂: DCS) gas may be used as the first gas and anammonia (NH₃) gas may be used as the second gas. At a first step, theDCS gas is supplied to the substrate 200, and at a second step, the NH₃gas is supplied to the substrate 200. At a purge step between the firststep and the second step, an N₂ gas is supplied and the internalatmosphere of the process chamber 201 is exhausted. By performing thecyclic process of performing the first step, the purge step, and thesecond step a plurality of times, a silicon nitride (SiN) film is formedon the substrate 200. In the case of performing the process usingplasma, the second gas is plasmarized by supplying a high-frequencypower to one or both of the first electrode 244 b and the RPU 180 b atleast in the course of supplying the second gas.

The manufacturing step S301 is performed in this manner. After themanufacturing step S301, an apparatus data acquiring step S302 ofacquiring data of each part constituting the apparatus is performed.

(Apparatus Data Acquiring Step S302)

Data (apparatus data) of each part is transmitted to the controller 260via a signal line. The controller 260 receives the data of each part bythe I/O port 264 as a data receiving part and records the received datain either or both of the RAM 262 and the memory device 263. In thiscase, the received data is converted into a first apparatus data andcalculated in the CPU 261. The first apparatus data generated by the CPU261 is recorded in either or both of the RAM 262 and the memory device263. Specifically, the first apparatus data is, for example, dataindicated in a table of FIG. 6. The data (measurement value) of eachpart is stored in measurement value tables X1 to X6 of each part. Scoredata is generated according to a degree of gap between the storedmeasurement values and a reference value B. The score data is stored intables a1 to a6 of the first apparatus data A1. The sum of each scoredata is also stored in a comprehensive evaluation table αa. In thisexample, although a temperature, a gas flow rate, a process chamberpressure, a high-frequency power, a traveling wave power, and areflective wave power are indicated as data of a1 to a6, the presentdisclosure is not limited thereto. In some embodiments, any othermeasurement value may be added or only a necessary measurement value maybe selected to generate the first apparatus data. For example, theopening degree data of the pressure regulator 227, the vaporizationamount data of the vaporizer 180, the position data of the substratemounting table 212, and the load data of the pump may be used as ameasurement value 4, a measurement value 5, and a measurement value 6.Furthermore, in the case of the plasma-less process, among the dataconfiguration indicated in FIG. 6, only the data of the measurementvalue 1, the measurement value 2, and the measurement value 3 may beused, or as described above, the measurement value 4, the measurement 5,and the measurement value 6 may be replaced. The scoring in this case isevaluated in a certain unit according to whether the measurement valueis away in a positive direction or in a negative direction from thereference value B. For example, the first apparatus data A1 is outputtedbased on an arithmetic expression used in the course of checking theintegrity of the apparatus by FDC.

(Data Transmitting/Receiving Step S303)

The first apparatus data generated in this manner is transmitted fromthe transceiving part 285 to the second control part 274 via the network268. In some embodiments, the first apparatus data may be transmitted tothe higher-level device 500 via the network 268. The second control part274 stores a plurality of first apparatus data transmitted from thecontroller 260 of each of the substrate processing apparatuses 100 inthe first memory part 276 installed in the second control part 274.Specifically, the first memory part 276 has a data table illustrated inFIG. 7 and records a first apparatus data A1, a first apparatus data B1,a first apparatus data C1, . . . , and a first apparatus data N1. Inthis embodiment, an example in which the first apparatus data A1, B1,and Cl respectively corresponding to the substrate processingapparatuses 100 a, 100 b, and 100 c, and the first apparatus data N1corresponding to an Nth substrate processing apparatus 100 n (not shown)are inputted is illustrated. In this manner, the first apparatus dataA1, B1, C1, . . . , N1 are inputted to the data storages a1 to a6, b1 tob6, c1 to c6, . . . , n1 to n6) corresponding to alphabets a, b, c, n ofthe substrate processing apparatuses, respectively. Data of thecomprehensive evaluation is inputted to each of αa, αb, αc, . . . , αn.

The number of the first apparatus data corresponds to the number N ofsubstrate processing apparatuses 100 in operation, among the substrateprocessing apparatuses 100 installed in the substrate processing system1000. The first apparatus data of a certain substrate processingapparatus 100, among the plurality of substrate processing apparatuses100 installed in the substrate processing system 1000, may be acquiredand recorded. Further, a second apparatus data M1 as a sample may havebeen inputted to the second control part 274. The second apparatus dataM1 may be, for example, a higher-level apparatus data, data stored in acontrol part (not shown) equivalent to a first control part present inanother network, a certain apparatus data arbitrarily set by the user,or the like. The higher-level apparatus data is stored from thehigher-level device 500 via the network 268. Data of a substrateprocessing apparatus present in a substrate processing system present inanother network is also inputted via the network 268. The certainapparatus data is directly inputted to the second control part 274 bythe user. In FIG. 7, data y1 to y6 corresponding to the measurementvalues 1 to 6 have been inputted as the second apparatus data M1. Thecomprehensive evaluation data ay and a yield ranking data βy have alsobeen inputted.

In some embodiments, the yield ranking data of the process in eachsubstrate processing apparatus 100 may be stored in yield ranking tablesβa to βn from the higher-level device 500 via the network 268, inparallel to storing the plurality of first apparatus data.

(Data Calculation Step S304)

After each data is stored in the first memory part 276 of the secondcontrol part 274, the data is calculated in the first calculation part275. In the case where the data has been inputted to the yield rankingtable, priority data corresponding to yield ranking is stored inpriority data tables γ a to γ n. Furthermore, in the case where the datahas not been stored in the yield ranking table, the data stored in thecomprehensive evaluation data aa to an of each first apparatus data arecompared and the priority data is stored in the priority data tables γ ato γ n according to a certain rule. In this embodiment, an example inwhich the priority data is stored in order, starting from that having alargest value of data of the comprehensive evaluation is illustrated. Inaddition, in the case where the data has been stored in the higher-levelapparatus data table, each of the first apparatus data and thehigher-level apparatus data may be compared, and the priority data maybe stored in order, starting from the first apparatus data having asmallest difference.

Furthermore, based on a first apparatus data corresponding to alower-level data belonging to a lower-level group, and one or both of afirst apparatus data and a second apparatus data corresponding to ahigher-level data belonging to a higher-level group, among the prioritydata, a parameter change data of a substrate processing apparatuscorresponding to the lower-level data may be generated. For example, asillustrated in FIG. 8, it is determined whether the change of parametersof the substrate processing apparatus 100 c is necessary from a degreeof gap between the measurement values based on the first apparatus dataC1 as the lower-level data and one or both of the first apparatus dataA1 and the higher-level apparatus data as the higher-level data.Determination data of whether the change of parameters is necessary isinputted to the data tables of c1 p to c6 p. The number of data cells ofthe data tables is equal to the number of data cells of the data tablesof the first apparatus data. It is determined that the change ofparameters is necessary when data corresponding to each measurementvalue is different by a certain numerical value or greater, and thechange of parameters is not necessary when the data falls within acertain numerical value range. Further, in some embodiments, theparameter change data may be generated by determining whether theparameter change of the apparatus is necessary from a difference betweenthe first apparatus data whose priority data is minimum (uppermost) andthe first apparatus data whose priority data is maximum (lowermost).With this configuration, parameters that need to be changed in thesubstrate processing apparatuses having a process result with badcharacteristics, among the plurality of substrate processingapparatuses, can be discovered at an initial stage. Furthermore, it ispossible to suppress the manufacturing throughput of a semiconductordevice from being degraded due to the stop of the process caused bymaintenance.

(Data Transmitting/Receiving Step S305)

The priority data generated by the second control part 274 istransmitted to one or more components of the controller 260, thehigher-level device 500, a transfer robot 4000 (to be described later)and the like of each substrate processing apparatus 100. In thecontroller 260, the transmitted priority data is recorded in either orboth of the RAM 262 and the memory device 263.

(Data Notifying Step S306)

The controller 260 installed in each substrate processing apparatus 100displays the received priority data on the display screen 270.

(Setting Check Step S307)

The controller 260 checks whether the parameter change data is receivedand determines whether the check result is Yes or No. If it isdetermined that the parameter change data is received, the controller260 decides the check result as Yes. If the determination result is Yes,a parameter change step S308 is performed. On the other hand, if it isdetermined that the parameter change data is not received, thecontroller 260 decides the check result as No and executes a transfersetting change step S309.

(Parameter Change Step S308)

At the parameter change step S308, why the change of parameters isnecessary is displayed on the display screen 270. For example, aparameter change message 270 a as illustrated in FIG. 9 is displayed onthe display screen 270. The parameter change message 270 a has at leastan OK button 270 b. When the OK button 270 b is pressed, a parameterchange screen 270 d is displayed as illustrated in FIG. 10. On theparameter change screen 270 d, parameters which are determined that thechange of parameters is necessary in FIG. 8 are displayed in such amanner that data can be entered, and parameters which are determinedthat the change of parameters is not necessary are displayed in such amanner that data cannot be entered. By displaying the parameters thatneed to be changed in this manner, it is possible to shorten themaintenance time to make the performance for each substrate processingapparatus 100 uniform. That is to say, it is possible to improve themanufacturing throughput of a semiconductor device by the maintenancetime.

The parameters for which data can be entered at that time may also bechanged according to an account level (user level) of a user (operator)who operates the substrate processing apparatus 100 (the input/outputdevice 269). FIG. 11 illustrates an example of an operation range ofparameters according to an account level of a user. In FIG. 11, anexample of an operation range of each of user levels 1 to 4 isillustrated. In the user level 1, the operation of all the parameters isunavailable and a message 270 e indicating that the operation isunavailable is displayed on the display screen 270. In the case ofdisplaying the operation unavailability, a notification data requestingan operable user level staff may also be transmitted to the secondcontrol part 274 or the higher-level device 500. As illustrated in FIG.11, a button for calling a person in charge may also be displayed. Whenthe button for calling a person in charge is pressed, the controller 260may transmit data calling the person in charge to one or both of thesecond control part 274 and the higher-level device 500. Subsequently,the user level 2 is set to adjust a traveling wave power and areflective wave power. The user level 3 is set to regulate a processchamber pressure and a high-frequency power, in addition to theparameters operable by the user level 2. The user level 4 is set toadjust a temperature and a gas flow rate, in addition to the parametersoperable by the user level 3. In this manner, the parameters can bechanged according to the account level of the user. With thisconfiguration, it is possible to avoid making an erroneous change whenchanging the parameters.

(Transfer Setting Change Step S309)

At the transfer setting change step S309, the second control part 274generates a transfer data for setting usage priority (transfer order) ofeach substrate processing apparatus 100 based on the priority data. Thetransfer data is transmitted to at least one of the higher-level device500, and a transfer controller 4001 which controls the transfer robot4000 for transferring the substrate 200 or pods 2001 (to be describedlater). For example, as illustrated in FIG. 12, before the priority datais received (when the number of times of data reception is 0), thesubstrate is transferred in the order of the first substrate processingapparatus 100 a, the second substrate processing apparatus 100 b, thethird substrate processing apparatus 100 c, and the fourth substrateprocessing apparatus 100 d, and after the priority data is received, thetransfer order of the substrate is changed to the order of the secondsubstrate processing apparatus 100 b, the first substrate processingapparatus 100 a, the third substrate processing apparatus 100 c, and thefourth substrate processing apparatus 100 d. In this manner, wheneverthe priority data is received, the transfer order is changed. With thisconfiguration, it is possible to continuously perform the substrateprocess of desired characteristics. Furthermore, the example in whichthe transfer setting change step S309 is performed after the settingcheck step S307 is illustrated, but the present disclosure is notlimited thereto. For example, the transfer setting change step S309 maybe performed after the priority data is generated.

In addition, when a state in which the transfer order belongs to thelower-level group is continued for a predetermined number of times orwhen the number that the transfer order belongs to the lower-level groupfor a predetermined period of time is counted for a predetermined numberof times, a process continuation necessity data indicating that thechange of parameters is necessary or that the maintenance is necessarymay be displayed on the display screen 270. An example thereof isillustrated in FIG. 12. In FIG. 12, regarding the fourth substrateprocessing apparatus 100 d, when a state in which the transfer order is4^(th) is continued n times, data notifying one or more processstop/parameter change/maintenance is generated as the processcontinuation necessity data. One or both of the second control part 274and the higher-level device 500 may be notified of the processcontinuation necessity data. With this configuration, it is possible toavoid the process in the substrate processing apparatus 100 having lowpriority, and to suppress deterioration in process uniformity (yield)for each substrate. In some embodiments, when the lowermost state iscontinued for a predetermined number of times among the transfer orders,the process continuation necessity data may be transmitted.

Furthermore, when the state of the lower-level group in the transferorder is continued for a predetermined number of times or when thetransfer order is counted a predetermined number of times for apredetermined period of time, a degeneracy operation may be performedsuch that the transfer to the substrate processing apparatus 100 whosetransfer order belongs to the lower-level group is stopped and onlyanother substrate processing apparatus 100 is used. In some embodiments,a degeneracy operation may be performed such that the transfer to thesubstrate processing apparatus 100 having a lowest transfer order isstopped and only another substrate processing apparatus 100 is used.

While one embodiment of the present disclosure has been specificallydescribed above, the present disclosure is not limited to theaforementioned embodiment but may be differently modified withoutdeparting from the spirit of the present disclosure.

In the above description, the second control part 274 is configured notto be included in each substrate processing apparatus 100, but it may beinstalled in one of the substrate processing apparatuses 100 asillustrated in FIG. 13. FIG. 13 illustrates an example in which thesecond control part is installed inside the first substrate processingapparatus 100 a.

In addition, although there has been described an example in which thedisplay screen 270 is incorporated in the input/output device 269, thepresent disclosure is not limited thereto. In some embodiments, thedisplay screen 270 and the input/output device 269 may be installedindependently of one another. For example, a display may be installedindependently from the input/output device.

Furthermore, in the substrate processing system 1000 described above,the configuration in which the substrate processing apparatus 100 thatprocesses one sheet of substrate is controlled by the second controlpart 274 has been described, but the present disclosure is not limitedthereto. In a substrate processing system 3000 illustrated in FIG. 14, aplurality of cluster type substrate processing apparatuses 2000 eachincluding a plurality of substrate processing apparatuses 100 may beprepared. The plurality of cluster type substrate processing apparatuses2000 may be controlled by the second control section 274.

The cluster type substrate processing apparatus 2000 processes thesubstrates 200, and mainly includes an IO stage 2100, an atmospherictransfer chamber 2200, a load lock (L/L) 2300, a vacuum transfer chamber2400, and substrate processing apparatuses 100 (100 a, 100 b, 100 c, and100 d). Next, each component will be described in detail. In thedescription of FIG. 14, it is assumed that the X1 direction is right,the X2 direction is left, the Y1 direction is front, and the Y2direction is rear.

(Atmospheric Transfer Chamber and IO Stage)

The IO stage (load port) 2100 is installed in the front of the clustertype substrate processing apparatus 2000. A plurality of pods 2001 aremounted on the IO stage 2100. The pods 2001 are used as carriers fortransferring the substrate 200. A plurality of unprocessed substrates200 and a plurality of processed substrates 200 are stored in the pods2001 in a horizontal posture, respectively.

The pod 2001 is transferred to the IO stage 2100 by the transfer robot4000 that transfers the pod 2001. The transfer robot 4000 is controlledby the transfer controller 4001. A transfer data for setting thetransfer order in the transfer controller 4001 may be controlled by thesecond control part 274 or may be controlled by the higher-level device500. The respective components are connected to each other via thenetwork 268. The higher-level device 500 or the second control part 274controls the transfer robot 4000 to transfer the pods 2001 onto the IOstage 2100 of each cluster type substrate processing apparatus 2000 in apredetermined transfer order based on the priority data mentioned above.

The IO stage 2100 is disposed adjacent to the atmospheric transferchamber 2200. The load lock chamber 2300 (to be described later) isconnected to a surface of the atmospheric transfer chamber 2200, whichis different from that of the IO stage 2100.

The atmospheric transfer robot 2220 as a first transfer robot fortransferring the substrate 200 is installed inside the atmospherictransfer chamber 2200.

(Load Lock (L/L) Chamber)

The load lock chamber 2300 is disposed adjacent to the atmospherictransfer chamber 2200. The internal pressure of the L/L chamber 2300varies depending on the internal pressure of the atmospheric transferchamber 2200 and the internal pressure of the vacuum transfer chamber2400. Thus, the L/L chamber 2300 is structured to withstand a negativepressure.

(Vacuum Transfer Chamber)

The cluster type substrate processing apparatus 2000 includes the vacuumtransfer chamber (transfer module: TM) 2400 as a transfer chamberserving as a transfer space where the substrate 200 is transferred undera negative pressure. A housing 2410 constituting the TM 2400 is formedin a pentagon in a plan view. The L/L chamber 2300 and the substrateprocessing apparatus 100 that processes the substrate 200 are connectedto each side of the pentagon. The vacuum transfer robot 2700 as a secondtransfer robot that transfers the substrate 200 under a negativepressure is installed substantially at the center of the TM 2400. Inaddition, although an example in which the vacuum transfer chamber 2400is formed in a pentagon has been described above, the vacuum transferchamber 2400 may be formed in a polygon such as a quadrangle or ahexagon.

The vacuum transfer robot 2700 installed in the TM 2400 includes twoarms 2800 and 2900 that can operate independently of one another. Thevacuum transfer robot 2700 is controlled by the controller 260 describedabove. In the case where the priority (transfer order) data using theplurality of substrate processing apparatuses 100 installed in thecluster type substrate processing apparatus 2000 is set, the controller260 may be configured to set the vacuum transfer robot 2700 based on thepriority data. That is to say, in this embodiment, the controller 260 isconfigured to perform the same data process as that of the secondcontrol part. With this configuration, it is possible to further improvethe yield of substrate process.

The gate valve (GV) 1490 is installed in each substrate processingapparatus, as illustrated in FIG. 14. Specifically, a gate valve 1490 ais installed between the substrate processing apparatus 100 a and the TM2400, and a GV 1490 b is installed between the substrate processingapparatus 100 b and the TM 2400. A GV 1490 c is installed between thesubstrate processing apparatus 100 c and the TM 2400, and a GV 1490 d isinstalled between the substrate processing apparatus 100 d and the TM2400.

By performing the opening/closing operation by each GV 1490, thesubstrate 200 can be loaded and unloaded through the substrateloading/unloading port 1480 installed in each substrate processingapparatus 100.

In the above description, there has been described a method in which afilm is formed by alternately supplying the first gas and the secondgas, but the present disclosure is applicable to other methods. Forexample, the present disclosure is applicable to a method in which thesupply timing of the first gas and the supply timing of the second gasoverlap.

Furthermore, while in the above embodiment, there has been described amethod in which a process is performed by supplying two kinds of gases,a process using one kind of gas may be used.

Moreover, in the above description, the film forming process has beendescribed, but the present disclosure is applicable to other processes.Examples thereof include a diffusion process using plasma, an oxidizingprocess, a nitriding process, an oxynitriding process, a reductionprocess, an oxidation reduction process, an etching process, a heatingprocess, and the like. For example, the present disclosure may also beapplied to a plasma oxidation process or plasma nitridation process of afilm formed on a substrate surface or a substrate using only a reactiongas. Further, the present disclosure may also be applied to a plasmaannealing process using only a reaction gas. These processes may beperformed as the first process and thereafter the second processdescribed above may be performed.

In addition, in the above embodiment, there has been described theprocess of manufacturing a semiconductor device, but the presentdisclosure according to the embodiment may be applied to processes otherthan the process of manufacturing a semiconductor device. For example,the present disclosure may be applied to a substrate process such as aprocess of manufacturing a liquid crystal device, a process ofmanufacturing a solar cell, a process of manufacturing a light emittingdevice, a process of processing a glass substrate, a process ofprocessing a ceramic substrate, a process of processing a conductivesubstrate, and the like.

Furthermore, in the above embodiment, there has been described anexample in which a silicon nitride film is formed using asilicon-containing gas as a precursor gas and a nitrogen-containing gasas a reactive gas, but the present disclosure is applicable to theformation of a film using other gases. For example, the presentdisclosure is applicable to the formation of an oxygen-containing film,a nitrogen-containing film, a carbon-containing film, a boron-containingfilm, a metal-containing film, a film containing a plurality of seelements, or the like. These films include, for example, an AlO film, aZrO film, an HfO film, an HfAlO film, a ZrAlO film, an SiC film, an SiCNfilm, an SiBN film, a TiN film, a TiC film, a TiAlC film, and the like.

Moreover, in the above embodiment, an apparatus configuration in whichone sheet of substrate is processed in a single process chamber has beenillustrated. However, the present disclosure is not limited thereto andit may be an apparatus in which a plurality of substrates is arranged ina horizontal direction or in a vertical direction.

According to the present disclosure in some embodiments, it is possibleto improve a process uniformity for each substrate.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the disclosures. Indeed, the embodiments described herein maybe embodied in a variety of other forms. Furthermore, various omissions,substitutions and changes in the form of the embodiments describedherein may be made without departing from the spirit of the disclosures.The accompanying claims and their equivalents are intended to cover suchforms or modifications as would fall within the scope and spirit of thedisclosures.

What is claimed is:
 1. A substrate processing system that improves ayield in manufacturing a semiconductor substrate, comprising: aplurality of substrate processing apparatuses; a plurality of sets ofmeasuring devices, each set of measuring devices of the plurality ofsets of measuring devices including one or more measuring devices andbeing configured to measure one or more parameters of one of theplurality of substrate processing apparatuses while substrates areprocessed, the parameters being associated with one or more states of atleast one part constituting each of the substrate processingapparatuses; a plurality of first control parts, each of which isinstalled in a substrate processing apparatus among the plurality ofsubstrate processing apparatuses and configured to generate a firstapparatus data based on the parameters from a set of measuring devicesamong the plurality of sets of measuring devices, the set of measuringdevices being associated with the substrate processing apparatus; asecond control part configured to: receive the first apparatus data fromeach of the plurality of substrate processing apparatuses, generate aplurality of priority levels, each of which is generated for one of theplurality of substrate processing apparatuses based on the firstapparatus data, the plurality of priority levels including a first leveland a second level that is higher than the first level, generate aparameter change data for at least one of the plurality of substrateprocessing apparatuses based on the first apparatus data from at leastone of the plurality of substrate processing apparatuses, the parameterchange data being indicative of a change of at least one of theparameters, and adjust one or more parameters of the plurality ofsubstrate processing apparatuses by transmitting the parameter changedata and at least one of the plurality of priority levels to at leastone of the plurality of first control parts; and a display partconfigured to display a parameter change message based on the parameterchange data and to display at least one of the plurality of prioritylevels, wherein the parameters of each of the plurality of substrateprocessing apparatuses include at least one selected from the groupconsisting of temperature, process chamber pressure, high-frequencypower, reflective wave power, and traveling wave power.
 2. The system ofclaim 1, wherein based on the first apparatus data corresponding to thefirst level and one or both of the first apparatus data corresponding tothe second level and a second apparatus data recorded in the secondcontrol part, the second control part is configured to generate theparameter change data of each of the plurality of substrate processingapparatuses corresponding to the first level and transmit the parameterchange data to the at least one of the plurality of first control parts,and the at least one of the plurality of first control parts isconfigured to control the display part to display the parameter changemessage thereon based on the parameter change data.
 3. The system ofclaim 2, wherein the at least one of the plurality of first controlparts is configured to control the display part to display thereon,changeable parameters among the one or more parameters of the pluralityof substrate processing apparatuses, based on the parameter change dataand a user level of each of the plurality of substrate processingapparatuses.
 4. The system of claim 3, wherein the second control partis configured to set a usage priority of each of the plurality ofsubstrate processing apparatuses based on the plurality of prioritylevels, and transmit a transfer data so that a substrate is transferredto each of the plurality of substrate processing apparatuses based onthe usage priority.
 5. The system of claim 4, wherein the second controlpart is configured to generate the plurality of priority levels aplurality of times and subsequently, configured to transmit a signal tothe at least one of the plurality of first control parts of thesubstrate processing apparatus in which the number of processes is equalto or greater than a predetermined number of times, the signalindicating a change of at least one of the parameters or a processcontinuation necessity data.
 6. The system of claim 3, wherein thesecond control part is configured to generate the plurality of prioritylevels a plurality of times and subsequently, configured to transmit asignal to the at least one of the plurality of first control parts ofthe substrate processing apparatus in which the number of processes isequal to or greater than a predetermined number of times, the signalindicating a change of at least one of the parameters or a processcontinuation necessity data.
 7. The system of claim 2, wherein thesecond control part is configured to set a usage priority of each of theplurality of substrate processing apparatuses based on the plurality ofpriority levels, and transmit a transfer data so that a substrate istransferred to each of the plurality of substrate processing apparatusesbased on the usage priority.
 8. The system of claim 2, wherein thesecond control part is configured to generate the plurality of prioritylevels a plurality of times and subsequently, configured to transmit asignal to the at least one of the plurality of first control parts ofthe substrate processing apparatus in which the number of processes isequal to or greater than a predetermined number of times, the signalindicating a change of at least one of the parameters or a processcontinuation necessity data.
 9. The system of claim 1, wherein thesecond control part is configured to set a usage priority of each of theplurality of substrate processing apparatuses based on the plurality ofpriority levels, and transmit a transfer data so that a substrate istransferred to each of the plurality of substrate processing apparatusesbased on the usage priority.
 10. The system of claim 9, wherein thesecond control part is configured to generate the plurality of prioritylevels a plurality of times and subsequently, configured to transmit asignal to the at least one of the plurality of first control parts ofthe substrate processing apparatus in which the number of processes isequal to or greater than a predetermined number of times, the signalindicating a change of at least one of the parameters or a processcontinuation necessity data.
 11. The system of claim 1, wherein thesecond control part is configured to generate the plurality of prioritylevels a plurality of times and subsequently, configured to transmit asignal to the at least one of the plurality of first control parts ofthe substrate processing apparatus in which the number of processes isequal to or greater than a predetermined number of times, the signalindicating a change of at least one of the parameters or a processcontinuation necessity data.
 12. The system of claim 1, wherein theselected at least one of the parameters of each of the plurality ofsubstrate processing apparatuses includes temperature.
 13. The system ofclaim 1, wherein the selected at least one of the parameters of each ofthe plurality of substrate processing apparatuses includes processchamber pressure.
 14. The system of claim 1, wherein the second controlpart is configured to generate the plurality of priority levels aplurality of times and subsequently, configured to transmit a signal tothe at least one of the plurality of first control parts of thesubstrate processing apparatus in which the number of processes is equalto or greater than a predetermined number of times, the signalindicating a change of at least one of the parameters; or a processcontinuation necessity data including at least one of process stop andmaintenance.
 15. The system of claim 1, wherein the selected at leastone of the parameters of each of the plurality of substrate processingapparatuses includes high-frequency power.
 16. The system of claim 1,wherein the selected at least one of the parameters of each of theplurality of substrate processing apparatuses includes reflective wavepower.
 17. The system of claim 1, wherein the selected at least one ofthe parameters of each of the plurality of substrate processingapparatuses includes traveling wave power.